Glass Through-Hole (TGV) Metallization
Glass Through-Hole (TGV) Metallization
Technology Introduction:Glass substrate has high structural integrity, low electrical loss, vibration resistance, temperature resistance and environmental durability characteristics, in the semiconductor package three-dimensional stacked chip structure, glass adapter plate has excellent electrical i...
Ceramic Through-Hole (TCV) Metallization
Ceramic Through-Hole (TCV) Metallization
Product Introduction:Ceramic Via Interconnect Technology (TCV for short) is a new interconnect technology used in high-density three-dimensional packaging. The ceramic substrate hole metallization scheme using traditional copper electroplating is prone to many process difficulties such as residual l...
Through-Silicon Hole (TSV) Metallization
Through-Silicon Hole (TSV) Metallization
Technology Introduction:With the increase in the number of transistors in the chip, the vertical stacking of through-silicon via packages (TSVs) breaks through the bottleneck of traditional two-dimensional integration in the field of semiconductor devices. Through three-dimensional integration, thro...